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Ільченко Володимир Васильович volodymyr.ilchenko@knu.ua Акаунт (профіль) в наукометричних базах даних: Scopus |
| Посада | професор |
| Кафедра | Кафедра нанофізики конденсованих середовищ |
| Науковий ступінь (ступінь, спеціальність) | доктор фізико-математичних наук |
| Вчене звання | професор |
| Публікації | 1. Evtukh A., Bratus O., Ilchenko V., Marin V., Vasyliev I. Capacitive Properties of MIS Structures with SiOx and SixOyNz Films Containing Si Nanoclusters. Journal of Nano Research, 2016, V. 39, p. 162-168. 2. Romanyuk B., Melnik V., Ilchenko V. et al. Structural and electrical properties of oxygen complexes in Cz and FZ silicon crystals implanted with carbon ions. Nanoscale Research Letters, 2015, V. 10(1), p. 693(1-6). 3. Bunak S.V., Ilchenko V.V. , Marin V.V., Melnik V.P. , Khacevich I.M., Tretyak O.V., Shkavro A.G. Electrical properties of MIS structures with Si NCs. Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, V. 14, No. 2, p. 241-246. 4. Ilchenko V.V., Lin S.D., Marin V.V., Tretyak O.V. Electronic properties of FET structures with QDs layer under the Gate area. Sensor Electronics and Microsystem Technologies, 2011, V. 2(8), No.1, p.79-84. 5. Bunak S.V., Buyanin A.A., Ilchenko V.V. , Marin V.V., Melnik V.P., Khacevich I.M. , Tretyak O.V., Shkavro A.G. Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2. Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, V. 13, N 1, p.p. 12-18. 6. Lin S.D., Ilchenko V.V., Marin V.V., Buyanin O.O., Panarin K.Y., Tretyak O.V. Frequency dependence of negative differential capacitance in Schottky diodes with InAs quantum dots. Appl. Phys. Lett., 2008, V.93, - p. 103103(1-3). 7. Ilchenko V.V., Lin S.D., Marin V.V., Shkil N.V., Panarin K.Y., Buyanin A.A., Tretyak O.V. Room temperature negative differential capacitance in self-assembled quantum dots. Journal of Physics D: Appl. Phys., 2008, V. 41, p.p. 235107(1-4). 8. Lin S.D., Ilchenko V.V., Marin V.V.et al. Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature Appl. Phys. Lett., 2007.- Vol.90, P. 263114(1-3). 9. Lin S.D., Lee C.P., Ilchenko V.V., Sheka D.I., Tretyak O.V., Korol A.M., Nosenko I.V. Coherent tunneling in a semiconductor system: Double barrier resonant-tunneling structure built in the Schottky barrier. Journal of physical studies, 2007, V.11, N.3, p.294-297. 10. Lin S.D., Lee C.P., Ilchenko V.V., Marin V.V., Shkil M.V., Buyanin A.A., Panarin K.Y., Tretyak O.V. Investigation of negative differencial capacitance-voltage dependences of Schottky diodes structures with GaAs/InAs QDs. Sensor Electronics and Microsystem Technologies, 2006, №2, p. 3-9. 11. Deep level transient spectroscopy characterization of InAs self-assembled quantum dots. V.V.Ilchenko, S.D.Lin, C.P.Lee and O.V.Tretyak (Journal of Applied Physics, 2001, V. 89, No.2, p.p. 1172-1174). |
| Проекти | |
| Конференції | 1. Ilchenko V., Vasyliev I., Derenskyi V, Gerasymenko M., Loi M.A. Admittance Spectroscopy of Charge Traps of FET Based on Nanotubes. Conference Proceedings of 2017 IEEE 34th International Scientific Conference on Electronics and Nanotechnology (ELNANO) (April 18-20, 2017 Kyiv, Ukraine), 2017, p. 198-200. 2. Romanyuk B., Melnik V., Il'chenko V. et al. Formation of shallow p-n junctions in Cz Si by low-energy carbon ion implantation. Abstracts of the 2014 ECS and SMEQ (Sociedad Mexicana de Electroquímica) Joint International Meeting. ECS Transactions. (Oct. 5-9, Cancun, Mexico, 2014), 2014, V.64 (11), p. 187-198. 3. Ilchenko V.V., Marin V.V., Vasyliev I S., Tretyak O.V. Admittance spectroscopy using for the determination of parameters of Si nanoclusters embedded in SiO2. Conference Proceedings of 2014 IEEE 34th International Scientific Conference on Electronics and Nanotechnology (ELNANO) (April 15-18, 2014 Kyiv, Ukraine), 2014, p. 86-89. 4. Chen P.S., Pei Z.W., Tsai M.J., Shkil M.V., Ilchenko V.V., Tretyak O.V. C–V and AS study of self-assembled Ge islands in Si p-n junction. WSEAS Transactions on electronics, 2004, April, V. 1, issue 2, p.p. 241-244.<br/> 5. DLTS characterization of InAs self-assembled quantum dots. V.V.Ilchenko, S.D.Lin, C.P.Lee, O.V.Tretyak (2000 IEEE International Symposyum on Compound Semiconductors. – Proceedings of the IEEE ) |